leshan radio company, ltd. lmbt5551dw1t1g maximum ratings rating symbol v alue unit collector?emitter voltage v ceo 140 vdc collector?base voltage v cbo 160 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) (br)ceo vdc (i c = 1.0 madc, i b = 0) 160 ? collector?base breakdown voltage (br)cbo vdc (i c = 100 adc, i e = 0) 180 ? emitter?base breakdown voltage (br)ebo vdc (i e = 10 adc, i c = 0) 6.0 ? collector cutoff current i cbo ( v cb = 120vdc, i e = 0) ? 50 nadc ( v cb = 120vdc, i e = 0, t a =100 c) ? 50 adc emitter cutoff current i ebo ? 50 nadc ( v be = 4.0vdc, i c = 0) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. feature ? device marking and ordering information device marking shipping g1 3000/tape&reel dual npn small signal surface 1 3 2 sot-363/sc-88 6 4 5 e 2 b 2 e 1 c 2 b 1 c 1 lmbt5551dw1t1g lmbt5551dw1t3g g1 10000/tape&reel mount transistor v v v compliance with rohs requirements. we declare that the material of product rev.o 1/5 s-lmbt5551dw1t1g s-lmbt5551dw1t1g s-lmbt5551dw1t3g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = 1.0 madc, v ce = 5.0 vdc) 80 ? (i c = 10 madc, v ce = 5.0 vdc) 80 250 (i c = 50 madc, v ce = 5.0vdc) 30 ? collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc) ? 0.15 (i c = 50 madc, i b = 5.0 madc ) ? 0.20 base?emitter saturation voltage v be(sat) vdc (i c = 10 madc, i b = 1.0 madc) ? 1.0 (i c = 50 madc, i b = 5.0 madc) ? 1.0 lmbt5551dw1t1g , s-lmbt5551dw1t1g rev.o 2/5
leshan radio company, ltd. v ce = 1.0 v v ce = 5.0 v i c , collector current (ma) figure 15. dc current gain h fe , dc current gain (normalized) t j = +125c +25c ?55c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 500 300 200 100 50 30 20 10 7.0 5.0 i b , base current (ma) figure 16. collector saturation region v be , base?emitter voltage (volts) figure 3. collector cut?off region i c , collector current (ma) figure 4. ?on? voltages v ce , collector emitter voltage (volts) i c , collector current ( a) v, voltage (volts) ?0.4 ?0.3 ?0.2 ?0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 10 1 10 0 10 ?1 10 ?2 10 ?3 10 ?4 10 ?5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.8 0.6 0.4 0.2 0 i c = 1.0 ma t j = 25c 10 ma 30 ma 100 ma 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.8 0.6 0.4 0.2 0 v ce = 30 v t j = 125c 75c 25c i c = i ces reverse forward t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 rev.o 3/5 lmbt5551dw1t1g , s-lmbt5551dw1t1g
leshan radio company, ltd. c obo c, capacitance (pf) 10.2 v v in 10 ms input pulse v bb r b 5.1 k 0.25 mf v in 1n914 v out r c v cc 30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% t, time (ns) values shown are for i c @ 10 ma figure 6. switching time test circuit i c , collector current (ma) figure 5. temperature coefficients v r , reverse voltage (volts) figure 7. capacitances figure i c , collector current (ma) 8. turn?on time i c , collector current (ma) figure 9. turn?off time t, time (ns) v , temperature coefficient (mv/c) t j = 25c i c /i b = 10 t j = 25c t r @ v cc = 120 v t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c /i b = 10 t j = 25c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v vc for v ce(sat) vb for v be(sat) t j = ?55c to +135c 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 c ibo 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 5000 3000 2000 1000 500 300 200 100 50 100 ?8.8 v 100 rev.o 4/5 lmbt5551dw1t1g , s-lmbt5551dw1t1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl xx m xx = specific device code m = date code generic marking diagram* 1 6 sc?88 dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e xx 1 6 m or h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 rev.o 5/5 lmbt5551dw1t1g , s-lmbt5551dw1t1g
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